| PART |
Description |
Maker |
| CSB834 CSB834O CSB834Y |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 200 hFE. Complementary CSD880
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD880O
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD880Y
|
Continental Device India Limited
|
| BD178-10 |
30.000W Switching PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 63 - 160 hFE.
|
Continental Device India Limited
|
| BD908 |
90.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 5 hFE.
|
Continental Device India Limited
|
| CSC1008Y |
0.800W Low Frequency NPN Plastic Leaded Transistor. 60V Vceo, 0.700A Ic, 40 - 80 hFE.
|
Continental Device India Limited
|
| BCX52 BCX51 BCX53 BCX53-16 BCX53-10 BCX51-10 BCX51 |
General Purpose Transistors - SOT89; VCEO=60V; hFE=100...250
General Purpose Transistors - SOT89; VCEO=45V; hFE=100...250
General Purpose Transistors - SOT89; VCEO=45V; hFE=40...250
General Purpose Transistors - SOT89; VCEO=80V; hFE=63...160
General Purpose Transistors - SOT89; VCEO=60V; hFE=63...160
General Purpose Transistors - SOT89; VCEO=45V; hFE=63...160
PNP SILICON AF TRANSISTORS
|
INFINEON[Infineon Technologies AG]
|
| 2SB1561-Q |
Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-60V
|
TY Semiconductor Co., Ltd
|
| FDB035AN06A0 FDB035AN06A0NL |
N-Channel PowerTrench MOSFET 60V/ 80A/ 3.5m
N-Channel PowerTrench MOSFET 60V, 80A, 3.5mз
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 0.0035 Ohms @ VGS = 10V, TO-263/D2PAK Package
N-Channel PowerTrench MOSFET 60V, 80A, 3.5mOhm
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W.
|
Usha India Ltd.
|
| FDI025N06 |
60V N-Channel PowerTrenchMOSFET
N-Channel PowerTrench㈢ MOSFET 60V, 265A, 2.5mヘ
N-Channel PowerTrench? MOSFET 60V, 265A, 2.5mΩ
|
Fairchild Semiconductor
|
| IRFIZ48G IRFIZ48 IRFIZ48GPBF |
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=39A)
Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A) 功率MOSFET（减振钢板基本\u003d 60V的，的Rdson）\u003d 0.018ohm，身份证\u003d 37A条）
Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A)
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 2SD1972 |
2W Lead frame NPN transistor, maximum rating: 60V Vceo, 3A Ic, 250 to 800 hFE.
For Low Frequency Power Amplify Application Silicon NPN Epitaxial Planar type
|
ISAHAYA[Isahaya Electronics Corporation]
N.A.
|
